Synthesis of enriched silicon for long-lived donor quantum states. We have discovered a method to make silicon highly enriched in the desirable spin-zero isotope using readily available ion implantation tools. This “semiconductor vacuum” is essential for building future quantum computer devices using the quantum spin of millions of implanted atoms with revolutionary capabilities. We have demonstrated long-lived implanted donor atom quantum states in prototype material, made possible by the deple ....Synthesis of enriched silicon for long-lived donor quantum states. We have discovered a method to make silicon highly enriched in the desirable spin-zero isotope using readily available ion implantation tools. This “semiconductor vacuum” is essential for building future quantum computer devices using the quantum spin of millions of implanted atoms with revolutionary capabilities. We have demonstrated long-lived implanted donor atom quantum states in prototype material, made possible by the depletion of background spins in natural silicon and now aim to push the enrichment to greater extremes. We will integrate the extreme material into functional devices that use electrically detected electron spin resonance to probe exceptionally durable quantum states and open a near-term pathway to large-scale devices.Read moreRead less
ARC Centre of Excellence in Future Low Energy Electronics Technologies. This Centre aims to develop the scientific foundation and intellectual property for new electronics technologies. Decreasing energy use is a major societal challenge, and this Centre aims to meet that challenge by realising fundamentally new types of electronic conduction without resistance in solid-state systems at room temperature. Novel resistance-free electronic phenomena at room temperature are expected to form the basi ....ARC Centre of Excellence in Future Low Energy Electronics Technologies. This Centre aims to develop the scientific foundation and intellectual property for new electronics technologies. Decreasing energy use is a major societal challenge, and this Centre aims to meet that challenge by realising fundamentally new types of electronic conduction without resistance in solid-state systems at room temperature. Novel resistance-free electronic phenomena at room temperature are expected to form the basis of integrated electronics technology with ultra-low energy consumption. This Centre’s development of innovative electronics could put Australia at the forefront of the international electronics industry.Read moreRead less
Discovery Early Career Researcher Award - Grant ID: DE160101334
Funder
Australian Research Council
Funding Amount
$373,536.00
Summary
Atomic Engineering of Molybdenum Disulfide for Ultra-Scaled Electronics. This project aims to explore novel approaches to device fabrication and functionality by atomic-level engineering of next generation electronic materials. As transistors shrink towards the atomic scale, conventional fabrication methods fail and device behaviour is altered by emerging quantum effects. Atomically thin two-dimensional (2D) crystals are emerging as next-generation electronic materials in nanoelectronics. Howeve ....Atomic Engineering of Molybdenum Disulfide for Ultra-Scaled Electronics. This project aims to explore novel approaches to device fabrication and functionality by atomic-level engineering of next generation electronic materials. As transistors shrink towards the atomic scale, conventional fabrication methods fail and device behaviour is altered by emerging quantum effects. Atomically thin two-dimensional (2D) crystals are emerging as next-generation electronic materials in nanoelectronics. However, no reliable fabrication techniques currently exist at the targeted sub-10-nanometre scale and basic scientific investigation of the operation of these ultimately small devices is needed. The project plans to use innovative approaches to investigate the physics of atomic-scale electronic devices and explore entirely new device concepts and functionalities for future quantum electronics.Read moreRead less
Tuning electronic and optical properties in twisted 2D semiconductors. This project aims to build and characterise a family of novel electronic materials: layers of atomically thin semiconductors stacked with a twist, to realise new electronic phases and new low-energy electronic devices. The project adopts an interdisciplinary approach combining advanced experimental and theoretical techniques. The expected outcomes will be a detailed understanding of the electronic and optical properties of tw ....Tuning electronic and optical properties in twisted 2D semiconductors. This project aims to build and characterise a family of novel electronic materials: layers of atomically thin semiconductors stacked with a twist, to realise new electronic phases and new low-energy electronic devices. The project adopts an interdisciplinary approach combining advanced experimental and theoretical techniques. The expected outcomes will be a detailed understanding of the electronic and optical properties of twisted semiconductor superlattices, such that they can be produced with desired properties on demand. The benefits of the project will be new materials for electronics and optoelectronics applications, new links to international organisations, and training of students and postdocs for careers in nanoelectronics. Read moreRead less