Linkage Infrastructure, Equipment And Facilities - Grant ID: LE100100146
Funder
Australian Research Council
Funding Amount
$800,000.00
Summary
Ultra high vacuum scanning probe microscope facility. Ultra high-vacuum scanning tunneling microscopy underpins advances in the understanding of novel materials for electronics, engineering and medical applications, including thin-films, nanostructures, advanced semiconductors, nanostructured (organic or inorganic) conductors, and nanoscale interfaces (heteronanostructures). It is a core technique underpinning the new Superscience agenda in Future Technologies. A number of present and future re ....Ultra high vacuum scanning probe microscope facility. Ultra high-vacuum scanning tunneling microscopy underpins advances in the understanding of novel materials for electronics, engineering and medical applications, including thin-films, nanostructures, advanced semiconductors, nanostructured (organic or inorganic) conductors, and nanoscale interfaces (heteronanostructures). It is a core technique underpinning the new Superscience agenda in Future Technologies. A number of present and future research fields will benefit from the presence of this instrument, which will enhance Australia's competitiveness in nanotechnology research and development. Training of PhD and graduate students in this area is essential to exploit the potentiality of nanotechnology for the future benefit of Australia.Read moreRead less
Novel circuits and design strategies for sub-65 nanometre complementary metal oxide semiconductor technologies. This project will develop novel, state-of-the-art circuits and design strategies that overcome the challenges of current and future Integrated Circuit (IC) fabrication technologies. The extremely small sizes of transistors in these technologies offer advantages in speed, but at the price of a number of drawbacks, which the project will aim to overcome in this work. This research will m ....Novel circuits and design strategies for sub-65 nanometre complementary metal oxide semiconductor technologies. This project will develop novel, state-of-the-art circuits and design strategies that overcome the challenges of current and future Integrated Circuit (IC) fabrication technologies. The extremely small sizes of transistors in these technologies offer advantages in speed, but at the price of a number of drawbacks, which the project will aim to overcome in this work. This research will make a significant contribution to the field of IC design as well as providing training for students to fill the present and future needs of Australia's IC design companies. Some of the most advanced cochlear implants, mobile phone ICs, and Wireless Internet ICs have been designed in Australia, and companies in Australia desperately need graduates skilled in designing in the latest technologies.Read moreRead less
Linkage Infrastructure, Equipment And Facilities - Grant ID: LE140100170
Funder
Australian Research Council
Funding Amount
$560,000.00
Summary
Ultra low temperature scanning gate facility for study of advanced nanostructure devices and materials. Ultra low temperature scanning gate facility for study of advanced nanostructure devices and materials: Electronic devices and materials underpin a range of significant industries worldwide. However while there are numerous techniques for imaging the structure of a material, including X-rays, electron microscopy, atom probe tomography, and nuclear scattering, none allow us to see how the elect ....Ultra low temperature scanning gate facility for study of advanced nanostructure devices and materials. Ultra low temperature scanning gate facility for study of advanced nanostructure devices and materials: Electronic devices and materials underpin a range of significant industries worldwide. However while there are numerous techniques for imaging the structure of a material, including X-rays, electron microscopy, atom probe tomography, and nuclear scattering, none allow us to see how the electrons and holes move inside a material or device. This project will create a new scanning gate microscope facility for imaging electrical current flow in advanced quantum devices and the new generation of topological insulators and atomically thin crystals such as graphene. The project will stimulate new studies of the next generation of electronic materials and devices, providing the underpinning knowledge for the future development of post silicon electronics.Read moreRead less
A fundamental study of electronic transport in advanced semiconductor nanostructures. The principal aim of this project is to attract and retain very high calibre early career researchers by providing them with the best-available infrastructure and research environment, combined with world-class supervision and mentoring. The project brings together an outstanding team of international collaborators, who will work with the early career researchers to ensure that they are trained and mentored at ....A fundamental study of electronic transport in advanced semiconductor nanostructures. The principal aim of this project is to attract and retain very high calibre early career researchers by providing them with the best-available infrastructure and research environment, combined with world-class supervision and mentoring. The project brings together an outstanding team of international collaborators, who will work with the early career researchers to ensure that they are trained and mentored at an international level. The new science, novel characterisation methods, and theoretical models that are outcomes of this project will provide new opportunities and expertise to advance the strategic defence and national security interests of Australia, and the emerging Australian semiconductor device and solar cell industry. Read moreRead less
Discovery Early Career Researcher Award - Grant ID: DE150100118
Funder
Australian Research Council
Funding Amount
$301,751.00
Summary
Controlling Defects in 2D Materials for Advanced Optoelectronics. Control over defect densities in 2D transition metal chalcogenide films permit controlled fabrication of van der Waals heterostructures and other ultra-thin electronic devices. This is crucial for controlling the optoelectronic properties of devices, yet, unlike bulk semiconductors, defect and dopant control in 2D transition metal chalcogenides is not presently possible. This project aims to investigate the optical properties of s ....Controlling Defects in 2D Materials for Advanced Optoelectronics. Control over defect densities in 2D transition metal chalcogenide films permit controlled fabrication of van der Waals heterostructures and other ultra-thin electronic devices. This is crucial for controlling the optoelectronic properties of devices, yet, unlike bulk semiconductors, defect and dopant control in 2D transition metal chalcogenides is not presently possible. This project aims to investigate the optical properties of single-defects, and how to control them using sensitive microscopy and controlled ligand deposition. Simultaneous electronic characterisation and single-defect microscopy in fabricated thin-film transistors will be investigated to correlate optical and electronic properties of thin-film devices.Read moreRead less