Oxide-semiconductor epitaxy: towards next generation nanoelectronics. This project aims to integrate high quality functional oxide heterostructures with semiconductor platforms and address the fundamental obstacles in oxides for highly efficient and high-speed transistor applications by engineering their electronic band structures. The project aims to establish a bridge between the diverse electronic properties of oxides and the established semiconductor platform, and generate new devices and fu ....Oxide-semiconductor epitaxy: towards next generation nanoelectronics. This project aims to integrate high quality functional oxide heterostructures with semiconductor platforms and address the fundamental obstacles in oxides for highly efficient and high-speed transistor applications by engineering their electronic band structures. The project aims to establish a bridge between the diverse electronic properties of oxides and the established semiconductor platform, and generate new devices and functionalities. Expected outcomes include epitaxial functional oxides on Gallium arsenide with ultrahigh, room-temperature sheet electron mobility and a comprehensive understanding of its microscopic origin. This will fundamentally change the route toward novel transistors based on high speed and low energy oxide electronics.Read moreRead less
Beyond the Ferroelectric Field Effect Transistors. The von Neumann paradigm is the foundation of modern computing systems, which are based on the data exchange between central processing unit (CPU) and memory. The physical separation between the CPU and memory will cause von Neumann bottleneck – a memory wall to limit the data processing speed for contextually intelligent applications. This project aims to develop a novel ferroelectric field effect transistor that integrates a ferroelectric mat ....Beyond the Ferroelectric Field Effect Transistors. The von Neumann paradigm is the foundation of modern computing systems, which are based on the data exchange between central processing unit (CPU) and memory. The physical separation between the CPU and memory will cause von Neumann bottleneck – a memory wall to limit the data processing speed for contextually intelligent applications. This project aims to develop a novel ferroelectric field effect transistor that integrates a ferroelectric material into a semiconductor transistor structure to merge logic and memory functionalities in a single-device level. This will solve the memory wall problem while provide low power, high speed, high density and long data retention time for future logic-in-memory and data centric computing paradigms.Read moreRead less
Design of Non-Equilibrium Architectures: Leveraging High Entropy Materials. Novel metallic alloys, termed as ‘high entropy materials’, will be investigated as surface coatings in order to provide improved strength, corrosion and wear performance under extreme industrial environments. This new evolution in materials engineering is created by mixing at least 5 elements in equal ratios and has recently been proven to provide excellent functionality in the bulk form. The novelty of this project is t ....Design of Non-Equilibrium Architectures: Leveraging High Entropy Materials. Novel metallic alloys, termed as ‘high entropy materials’, will be investigated as surface coatings in order to provide improved strength, corrosion and wear performance under extreme industrial environments. This new evolution in materials engineering is created by mixing at least 5 elements in equal ratios and has recently been proven to provide excellent functionality in the bulk form. The novelty of this project is that thermal spray engineering will be employed to manufacture bespoke coatings for industries such as the mining and power generation sectors. We now need to understand the materials science for a technological tipping point that directly impacts manufacturing industries for improved performance, efficiency and reliability.Read moreRead less