Towards High-quality Hetero-epitaxial III-V Semiconductor Nanowires. The use of semiconductor nanowires has uncovered many scientific curiosities and extended their potential applications in many fields. In general, nanowire growth is governed by metallic catalysts, involving nanowire nucleation and growth. So far, the role of catalysts during nanowire nucleation is not clear and needs urgent attention. This project aims to investigate the behaviour of catalysts before and during the nucleation ....Towards High-quality Hetero-epitaxial III-V Semiconductor Nanowires. The use of semiconductor nanowires has uncovered many scientific curiosities and extended their potential applications in many fields. In general, nanowire growth is governed by metallic catalysts, involving nanowire nucleation and growth. So far, the role of catalysts during nanowire nucleation is not clear and needs urgent attention. This project aims to investigate the behaviour of catalysts before and during the nucleation of III-V nanowires by means of nano-characterisation to ultimately integrate high-quality III-V nanowires on silicon substrates. The new knowledge developed from this project is expected to provide critical insights for developing high-quality III-V nanowires integrated on silicon substrates.Read moreRead less
Understanding the role of catalysts in the epitaxial growth of multinary III-V semiconductor nanowires and nanowire heterostructures. This project will address a bottle-neck problem in the nanowire community. The outcomes of this project will provide new knowledge in nanoscience and guidelines for the development of nanowire-based nanodevices and nanosystems. This is strategically important to place Australia at the forefront of developments on nanoscience and nanotechnology.