Hetero-epitaxial silicon carbide: enabling wide-band-gap semiconductors on silicon for greener technologies. In the next decade wide band gap materials will unlock vast potential for a capillary outreach of smart heterogeneous devices, improving energy efficiency and lessening our carbon footprint. This project will aim at major breakthroughs, enabling this pressing technological demand, and putting Australia at the leading edge of this revolution.
A silicon-compatible light source on a silicon-on-insulator platform. Silicon is emerging as an important photonic material owing to the cheap processing methods developed for electronics. This project aims to capture key technology for integrating photonic components onto silicon. It can bring social and commercial benefits to Australia such as high-level research as well as opportunities for commercialisation.
Exploiting deep sub-surface temperature-induced phase-transformations for an improved approach to semiconductor laser-dicing. This project aims to explore sub-surface laser-induced phase transformations in semiconductors and to exploit this novel method for ultra-fine laser cutting of semiconductor wafers without debris. The outcomes will be understanding new temperature-induced material modifications and innovative technology development relevant for the semiconductor industry.