Structural Characterization of Ion Beam Synthesized Metallic Nanocrystals using Advanced Synchrotron based Analytical Techniques. Metallic nanocrystals formed by ion implantation represent a highly relevant class of nanomaterials with significant potential applications in communication technology. A detailed understanding of the structure of such crystals, as proposed in the project, will yield considerable information for efficient utilization of ion beam synthesized nanocrystals. This will enh ....Structural Characterization of Ion Beam Synthesized Metallic Nanocrystals using Advanced Synchrotron based Analytical Techniques. Metallic nanocrystals formed by ion implantation represent a highly relevant class of nanomaterials with significant potential applications in communication technology. A detailed understanding of the structure of such crystals, as proposed in the project, will yield considerable information for efficient utilization of ion beam synthesized nanocrystals. This will enhance Australia's strength in nanotechnology and materials science and create the potential for technical innovation. Furthermore, this project will produce significant know-how in synchrotron based analytical techniques which is invaluable with respect to future research at the forthcoming Australian synchrotron facility.Read moreRead less
Ion implantation induced diffusion and defect evolution in Si nanostructures. A fundamental understanding of nanostructures is essential for the development of nanoscale electronic devices. This project will investigate ion implantation of dopant atoms into Si nanostructures. The goal is to develop a broad understanding of the effect of the nanostructure dimensions on point-defect-induced diffusion and the formation of extended defects. In particular, the influence of multiple surfaces on point- ....Ion implantation induced diffusion and defect evolution in Si nanostructures. A fundamental understanding of nanostructures is essential for the development of nanoscale electronic devices. This project will investigate ion implantation of dopant atoms into Si nanostructures. The goal is to develop a broad understanding of the effect of the nanostructure dimensions on point-defect-induced diffusion and the formation of extended defects. In particular, the influence of multiple surfaces on point-defect recombination will be investigated. Concurrently, the techniques necessary for the analysis of nano-structures will be developed.
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Novel Silicon-Based Photonic Devices. Silicon's pre-eminence in high-speed digital electronics does not extend to optoelectronics where the demand is for devices that can generate, guide, detect and process light. However, the properties of silicon are dramatically altered when it is reduced to nanometre dimensions. Advances in the understanding of such effects and in the fabrication and application of nanoscale silicon have provided the prospect of new and innovative Si-based photonic devices, ....Novel Silicon-Based Photonic Devices. Silicon's pre-eminence in high-speed digital electronics does not extend to optoelectronics where the demand is for devices that can generate, guide, detect and process light. However, the properties of silicon are dramatically altered when it is reduced to nanometre dimensions. Advances in the understanding of such effects and in the fabrication and application of nanoscale silicon have provided the prospect of new and innovative Si-based photonic devices, and of fully integrated electronic and photonic functionality. This project aims to extend the understanding of nanoscale silicon and to develop and prototype novel Si-based photonic devices based on this material.Read moreRead less
The Physical and Optical Properties of Self-Assembled Si Nanocrystals. The properties of nano-scale materials can differ significantly from those of their bulk counterparts. As such, they can provide materials with new and novel properties as well as proving a useful test of modern theories. An outstanding example of the significance of such effects is provided by quantum confined silicon structures, such as porous or nanocrystalline silicon, which exhibit luminescence efficiencies up to a milli ....The Physical and Optical Properties of Self-Assembled Si Nanocrystals. The properties of nano-scale materials can differ significantly from those of their bulk counterparts. As such, they can provide materials with new and novel properties as well as proving a useful test of modern theories. An outstanding example of the significance of such effects is provided by quantum confined silicon structures, such as porous or nanocrystalline silicon, which exhibit luminescence efficiencies up to a million times greater than bulk silicon. This project aims to understand the novel optical properties and interactions that underpin potential applications of this technologically important material.Read moreRead less
Sampling and processing for diffusion magnetic resonance imaging. This project aims to develop optimal, efficient and robust signal processing methods for diffusion magnetic resonance imaging (dMRI) with reduced scan times. A child, possibly distressed, can only be motionless long enough to undergo a basic dMRI scan of the brain, but enhanced forms of dMRI need at least 60 minutes. The project’s processing methods will use spherical geometries, which encode information about white matter fibres ....Sampling and processing for diffusion magnetic resonance imaging. This project aims to develop optimal, efficient and robust signal processing methods for diffusion magnetic resonance imaging (dMRI) with reduced scan times. A child, possibly distressed, can only be motionless long enough to undergo a basic dMRI scan of the brain, but enhanced forms of dMRI need at least 60 minutes. The project’s processing methods will use spherical geometries, which encode information about white matter fibres in the brain, to collect and reconstruct images. The project is expected to reduce dMRI scan times and ultimately make non-invasive and inexpensive early detection of neurological disorders such as dementia feasible.Read moreRead less
Amorphisation of Semiconductor and Elemental Metallic Nanocrystals by Ion Irradiation. This proposal is consistent with Research Priority 3: Frontier Technologies for Building and Transforming Australian Industries and Priority Goals: Breakthrough Science, Advanced Materials and Frontier Technologies. We seek to understand and develop a unique methodology for modifying and tailoring the structure of semiconductor and metallic nanocrystals in ways not achievable within the bulk phase. Our res ....Amorphisation of Semiconductor and Elemental Metallic Nanocrystals by Ion Irradiation. This proposal is consistent with Research Priority 3: Frontier Technologies for Building and Transforming Australian Industries and Priority Goals: Breakthrough Science, Advanced Materials and Frontier Technologies. We seek to understand and develop a unique methodology for modifying and tailoring the structure of semiconductor and metallic nanocrystals in ways not achievable within the bulk phase. Our results and accompanying scientific insight will broaden the applicability of these materials in advanced technologies, enhance the national research profile, increase the domestic knowledge base and yield skilled, young scientists trained to utilize the Australian Synchrotron when commissioned in 2007.Read moreRead less
Dopants, defects and related issues in Zinc Oxide. ZnO is a promising semiconductor for optoelectronic devices namely green, blue, ultraviolet (UV) and white light emitting diodes (LEDs) and ultimately UV lasers. It can also act as a transparent conductive oxide which has applications in flat panel displays and photovoltaic devices. Because of these potential applications, ZnO is the 'hottest' semiconductor with abounding literature and four new international conferences organised on progress in ....Dopants, defects and related issues in Zinc Oxide. ZnO is a promising semiconductor for optoelectronic devices namely green, blue, ultraviolet (UV) and white light emitting diodes (LEDs) and ultimately UV lasers. It can also act as a transparent conductive oxide which has applications in flat panel displays and photovoltaic devices. Because of these potential applications, ZnO is the 'hottest' semiconductor with abounding literature and four new international conferences organised on progress in this research area in recent years. This project is an excellent opportunity for Australia to increase its strength in optoelectronic device research and to provide an understanding of some fundamental issues in doping, defect formation, diffusion and annihilation in ZnO.Read moreRead less
Nanocavities in Si - Structural Evolution and Metal Gettering. Nanocavities represent a novel means of minimising metallic contamination in the active region of Si microelectronic devices. We propose innovative experiments, using in-situ transmission electron microscopy and synchrotron-based x-ray methods, to achieve a fundamental understanding of the processes that govern nanocavity structural evolution and metallic impurity trapping. We seek to develop a patentable technology to enhance impu ....Nanocavities in Si - Structural Evolution and Metal Gettering. Nanocavities represent a novel means of minimising metallic contamination in the active region of Si microelectronic devices. We propose innovative experiments, using in-situ transmission electron microscopy and synchrotron-based x-ray methods, to achieve a fundamental understanding of the processes that govern nanocavity structural evolution and metallic impurity trapping. We seek to develop a patentable technology to enhance impurity trapping efficiency and thus dramatically increase the applicability of this industrially-relevant process.Read moreRead less
Asymmetric InP-based structures for high power laser diodes at 1400-1500 nm for pumping optical amplifiers used in communication systems. This project is aimed at obtaining high power, single mode 1400-1500 nm wavelength laser diodes using a novel design of asymmetric InP-based structures. These devices are in great demand for pumping of erbium-doped and Raman amplifiers for powering the next generation of dense wavelength division multiplexing optical networks. The low modal gain (confinement f ....Asymmetric InP-based structures for high power laser diodes at 1400-1500 nm for pumping optical amplifiers used in communication systems. This project is aimed at obtaining high power, single mode 1400-1500 nm wavelength laser diodes using a novel design of asymmetric InP-based structures. These devices are in great demand for pumping of erbium-doped and Raman amplifiers for powering the next generation of dense wavelength division multiplexing optical networks. The low modal gain (confinement factor) of this asymmetric structure is expected to reduce internal losses and hence increase the output power with better thermal dissipation. Single mode could be obtained by careful design in the trade-off between filamentation and threshold current. Ion implantation is also proposed to suppress higher order modes.Read moreRead less
Probing the properties of amorphous semiconductors with swift heavy ion irradiation and synchrotron radiation. This proposal is consistent with Research Priority 3: Frontier Technologies for Building and Transforming Australian Industries and the Priority Goals: Breakthrough Science, Frontier Technologies and Advanced Materials. We seek to deduce and understand the processes operative during swift heavy ion irradiation of amorphous semiconductors to probe fundamental materials properties. Ou ....Probing the properties of amorphous semiconductors with swift heavy ion irradiation and synchrotron radiation. This proposal is consistent with Research Priority 3: Frontier Technologies for Building and Transforming Australian Industries and the Priority Goals: Breakthrough Science, Frontier Technologies and Advanced Materials. We seek to deduce and understand the processes operative during swift heavy ion irradiation of amorphous semiconductors to probe fundamental materials properties. Our results and accompanying scientific insight will broaden the applicability of amorphous semiconductors in advanced technologies, enhance the national research profile, increase the domestic knowledge base and yield skilled, young scientists trained to utilise the Australian Synchrotron.Read moreRead less