Atomic-Scale Identification of Amorphization and Relaxation Processes in Compound Semiconductors. We seek a fundamental understanding of the processes that govern implantation-induced structure, at the nanometer scale, in the compound semiconductors used in photonic device fabrication. Since implantation-induced disorder limits the performance of such devices, the proposed project is of substantial technological significance and national benefit. The Photon Science techniques of perturbed angu ....Atomic-Scale Identification of Amorphization and Relaxation Processes in Compound Semiconductors. We seek a fundamental understanding of the processes that govern implantation-induced structure, at the nanometer scale, in the compound semiconductors used in photonic device fabrication. Since implantation-induced disorder limits the performance of such devices, the proposed project is of substantial technological significance and national benefit. The Photon Science techniques of perturbed angular correlation and extended x-ray absorption fine structure spectroscopy will be used to identify the mechanism of amorphisation and relaxation in order to enable more effective exploitation of compound semiconductors in advanced telecommunications systems.Read moreRead less
Charge transport and trapping in high-k dielectric films containing self-assembled nanocrystals. Growth in the use of portable electronic devices such as mobile phones, iPods, MP3-players and personal digital assistants (PDA's) has resulted in increased demand for low-power, high-density Flash memory. However, existing memory devices are difficult to scale to smaller dimensions and lower power without severely compromising reliability. This project will investigate the synthesis and properties ....Charge transport and trapping in high-k dielectric films containing self-assembled nanocrystals. Growth in the use of portable electronic devices such as mobile phones, iPods, MP3-players and personal digital assistants (PDA's) has resulted in increased demand for low-power, high-density Flash memory. However, existing memory devices are difficult to scale to smaller dimensions and lower power without severely compromising reliability. This project will investigate the synthesis and properties of a new class of materials that have the potential to overcome these limitations. Read moreRead less
Self-assembled semiconductor nanocrystals as functional materials for microelectronics, optoelectronics and photonics. This project will study an important new class of nanoscale materials (semiconductor nanocrystals) with the aim of understanding the processes and mechanisms responsible for their structure and properties. It will have direct application to microelectronics, optoelectronics and photonics; will provide world-class training for Australia's future scientists and engineers in mater ....Self-assembled semiconductor nanocrystals as functional materials for microelectronics, optoelectronics and photonics. This project will study an important new class of nanoscale materials (semiconductor nanocrystals) with the aim of understanding the processes and mechanisms responsible for their structure and properties. It will have direct application to microelectronics, optoelectronics and photonics; will provide world-class training for Australia's future scientists and engineers in materials science and nanotechnology; and will further strengthen international scientific collaboration in these field.Read moreRead less
Narrow band gap silicon: understanding and exploiting this new silicon phase. This project aims to study for the first time exciting new forms of conducting and insulating silicon that can be formed by simply pressing down on silicon with an indenter tip. As well as producing new science, the technological outcomes involve new devices and processes of significance to electronics and solar industries.
Ion-beam synthesis of functional oxides for next generation memory devices. This project seeks to explore a low-temperature approach to stoichiometry control using direct oxide synthesis and defect-engineering based on ion-implantation, a routine semiconductor fabrication process. This has the potential to improve device manufacturability and functionality. In thin film form, transition metal oxides can be subjected to intense electric fields and exhibit characteristic resistance changes suitabl ....Ion-beam synthesis of functional oxides for next generation memory devices. This project seeks to explore a low-temperature approach to stoichiometry control using direct oxide synthesis and defect-engineering based on ion-implantation, a routine semiconductor fabrication process. This has the potential to improve device manufacturability and functionality. In thin film form, transition metal oxides can be subjected to intense electric fields and exhibit characteristic resistance changes suitable for non-volatile memory applications. However, their electrical response depends critically on stoichiometry and this must be precisely engineered for optimal device performance. This project aims to develop next-generation memory devices as a replacement for current flash memory. The proposed technology uses resistance changes in functional-oxides to store information, and offers the potential for smaller and faster memory.Read moreRead less
Controlling the forming and switching characteristics of non-volatile resistive memory devices using ion-implantation. This project will develop new techniques for improving the reliability and endurance of a new class of non-volatile memory devices for use in portable electronics and embedded electronic systems. Such developments are essential for the development of next-generation devices.
Linkage Infrastructure, Equipment And Facilities - Grant ID: LE120100028
Funder
Australian Research Council
Funding Amount
$600,000.00
Summary
Advanced surface imaging and spectroscopy facility: Scanning auger nanoprobe. Understanding advanced materials and nano-fabricated devices on the nanometre scale is essential for innovation in the manufacturing, healthcare, pharmaceutical, energy and mining sectors. The next generation Scanning Auger Nanoprobe will support research rated well-above world standard and dramatically increase national surface analytical capacity.
Linkage Infrastructure, Equipment And Facilities - Grant ID: LE110100235
Funder
Australian Research Council
Funding Amount
$180,000.00
Summary
Interfacial mapping facility. New electronic materials and devices impact on everyday life in areas such as photovoltaics, biotechnology and healthcare. This facility will provide researchers with the unique capability of mapping both the structure and electronic properties of materials on the nanoscale. It will be an essential tool for developing new electronics based on nanotechnology.