Advanced microelectronic transistor structures for novel biosensor technology. This international, interdisciplinary team aims to develop an electronic biosensor technology that will significantly advance biomedical research to combat human disease. This is likely to have a major social impact on the community, improve health outcomes and generate substantial economic potential for the pharmaceutical industry. The principal benefit of this research will be the fabrication of electronic devices b ....Advanced microelectronic transistor structures for novel biosensor technology. This international, interdisciplinary team aims to develop an electronic biosensor technology that will significantly advance biomedical research to combat human disease. This is likely to have a major social impact on the community, improve health outcomes and generate substantial economic potential for the pharmaceutical industry. The principal benefit of this research will be the fabrication of electronic devices based on advanced materials, significantly reducing the time, the biological material used and the complexity of assessing human cell function. In addition to improving health through novel biosensor techniques, this technology is expected to lead to the creation of commercially important intellectual property.Read moreRead less
Special Research Initiatives - Grant ID: SR0354735
Funder
Australian Research Council
Funding Amount
$10,000.00
Summary
Australian Network on Microelectronics, Optoelectronics and Microelectromechanical Systems. The Network will encompass semiconductor microelectronics, optoelectronics, sensors and microelectromechanical systems (MEMS). Fundamental research in these areas enables the technological advances that underpin rapidly developing industries such as information and telecommunications technologies, defence, aerospace, medicine, and remote sensing. Exciting challenges exist in designing new devices that exp ....Australian Network on Microelectronics, Optoelectronics and Microelectromechanical Systems. The Network will encompass semiconductor microelectronics, optoelectronics, sensors and microelectromechanical systems (MEMS). Fundamental research in these areas enables the technological advances that underpin rapidly developing industries such as information and telecommunications technologies, defence, aerospace, medicine, and remote sensing. Exciting challenges exist in designing new devices that exploit unique semiconductor systems and technologies. By sharing capabilities and resources (both capital and human), the network will enable the issues associated with such novel materials and devices to be addressed in a targeted manner. The network will also guarantee the ongoing future of research in the area by actively involving early career researchers and postgraduate students.Read moreRead less
Investigation of novel magneto-optic materials exhibiting high Faraday figure of merit. Magneto-optical materials have a wide range of potential applications in consumer products, telecommunications and defence. Nanotechnologies based on these materials offer an even broader range of emerging applications. Understanding and participating in the development of magneto-optic technologies will therefore be critical to maintaining Australia's knowledge base and expertise in future technological adv ....Investigation of novel magneto-optic materials exhibiting high Faraday figure of merit. Magneto-optical materials have a wide range of potential applications in consumer products, telecommunications and defence. Nanotechnologies based on these materials offer an even broader range of emerging applications. Understanding and participating in the development of magneto-optic technologies will therefore be critical to maintaining Australia's knowledge base and expertise in future technological advances. Given the early stages of development of these technologies, Australia's expertise in material science and the patent rights held by Australian companies in this area, Australia has the opportunity to make major contributions to this field, and the potential to capitalise on the application of these technologies in niche markets.Read moreRead less
Linkage Infrastructure, Equipment And Facilities - Grant ID: LE0667994
Funder
Australian Research Council
Funding Amount
$1,000,000.00
Summary
National Nanolithography Facility. Nanotechnology is expected to have a major impact on quality of life and global economy. It is predicted to generate revenues as big as the ICT sector in 20 years time. The National Nanolithography Facility will enhance the Australian capability in the field of nanoscale science and technology. This will enable Australian researchers to achieve major impacts in many areas of nanotechnology with a strong potential impact on industry sectors such as computers, ....National Nanolithography Facility. Nanotechnology is expected to have a major impact on quality of life and global economy. It is predicted to generate revenues as big as the ICT sector in 20 years time. The National Nanolithography Facility will enhance the Australian capability in the field of nanoscale science and technology. This will enable Australian researchers to achieve major impacts in many areas of nanotechnology with a strong potential impact on industry sectors such as computers, communications, defence, health, bio-security. This facility has the potential for developing new technologies of fundamental as well as applied interest.Read moreRead less
Charge and Interface Properties of Novel Gallium Nitride Transistor Structures for Application in Low-Noise High-Frequency Electronics. Gallium Nitride (GaN)-based transistors offer a unique opportunity to simultaneously achieve both high power and low noise from amplifiers. This project aims to improve material and device design of GaN-based transistors. It comprises a systematic comparison of charge and interface properties with power and noise performance measurements of high electron mobilit ....Charge and Interface Properties of Novel Gallium Nitride Transistor Structures for Application in Low-Noise High-Frequency Electronics. Gallium Nitride (GaN)-based transistors offer a unique opportunity to simultaneously achieve both high power and low noise from amplifiers. This project aims to improve material and device design of GaN-based transistors. It comprises a systematic comparison of charge and interface properties with power and noise performance measurements of high electron mobility transistors grown using a broad variety of novel growth, processing and device innovations. The expected outcome of the program includes key advances in the areas of GaN materials growth, device processing and passivation technology, which will ultimately lead to breakthrough performance in ultra-low-noise electronics for high frequency systems.Read moreRead less
Linkage Infrastructure, Equipment And Facilities - Grant ID: LE0238960
Funder
Australian Research Council
Funding Amount
$940,000.00
Summary
High Performance Semiconductor Micromachining Facility. The purpose of this project is to make available to the Australian semiconductor research community a facility to undertake specialist deposition and etching tasks needed for fabrication of next generation solar cells, microelectronics, optronics, and micro-electromechanical systems. The facility will have the flexibility to allow independent control of major process parameters, allowing development of new fabrication technologies which wi ....High Performance Semiconductor Micromachining Facility. The purpose of this project is to make available to the Australian semiconductor research community a facility to undertake specialist deposition and etching tasks needed for fabrication of next generation solar cells, microelectronics, optronics, and micro-electromechanical systems. The facility will have the flexibility to allow independent control of major process parameters, allowing development of new fabrication technologies which will be generic to a wide range of semiconductor materials. In particular, the facility will be unique in its ability to perform processes at low temperatures, and under conditions that allow optimisation of the deposition and etching processes, without compromising the performance of delicate devices or exceeding the maximum process temperature limitations found in many mainstream semiconductor materials technologies.Read moreRead less
New multiplexed optical read-out technologies for micromachined cantilever sensor arrays. Passive sensing of chemical and biological agents is an essential capability in fields as diverse as national security, agriculture, mining and medicine. In many cases, generic sensing (e.g. are there pesticides present) as well as specific sensing (which pesticide) are both important. While sensors based on micro-electromechanical systems (MEMS) have shown extremely high performance at low cost, they have ....New multiplexed optical read-out technologies for micromachined cantilever sensor arrays. Passive sensing of chemical and biological agents is an essential capability in fields as diverse as national security, agriculture, mining and medicine. In many cases, generic sensing (e.g. are there pesticides present) as well as specific sensing (which pesticide) are both important. While sensors based on micro-electromechanical systems (MEMS) have shown extremely high performance at low cost, they have been limited to detection of a specific substance. Success in this project will make low cost generic MEMS-based sensors a reality, allowing, for the first time, wide-spread use of sensitive sensing systems in applications such as farming, container transport security, general medical practice and national security.Read moreRead less
Growth dynamics and innovative spectroscopic techniques for real-time control of advanced electronics materials grown by molecular beam epitaxy. Many important semiconductor devices for communications, lasers, high speed electronics and optical sensing are based on materials grown by Molecular Beam Epitaxy (MBE). This research will provide the first measurements of the reactions taking place during MBE and thus enable accurate growth of the complex multi-layered material required for improved se ....Growth dynamics and innovative spectroscopic techniques for real-time control of advanced electronics materials grown by molecular beam epitaxy. Many important semiconductor devices for communications, lasers, high speed electronics and optical sensing are based on materials grown by Molecular Beam Epitaxy (MBE). This research will provide the first measurements of the reactions taking place during MBE and thus enable accurate growth of the complex multi-layered material required for improved semiconductor devices. In particular, this project will make a major contribution to Australia's established capability to produce and develop state-of-the art infrared sensors as required for defence applications, remote sensing of minerals and pollutants, chemical analysis, and health diagnostics. PhD students will be trained in advanced semiconductor growth and optical sensing technologies.Read moreRead less
Ion implantation doping of gallium nitride for high performance electronic devices. This project forms part of a long-term, international research program into the development of high-power, high-frequency electronics for high performance radar and communications systems. The advanced fabrication technologies and designs being investigated in this project fall well within the designated priority goal of Frontier Technologies. Gallium nitride technology is also of high interest to defence organis ....Ion implantation doping of gallium nitride for high performance electronic devices. This project forms part of a long-term, international research program into the development of high-power, high-frequency electronics for high performance radar and communications systems. The advanced fabrication technologies and designs being investigated in this project fall well within the designated priority goal of Frontier Technologies. Gallium nitride technology is also of high interest to defence organisations, as radar and satellite-communications links, which operate at frequencies ranging from hundreds of MHz to tens of GHz, often have high power-amplification requirements. The project therefore also falls within the priority goal of Transformational Defence Technologies.Read moreRead less
A comprehensive approach to development and understanding of III-nitride-based high performance electronic devices. This project forms part of a long-term, international research program into the development of high-power, high-frequency electronics for high performance radar and communications systems. The advanced fabrication technologies and designs being investigated in this project fall well within the designated priority goal of Frontier Technologies. III-nitride (GaN, AlN, InN and alloys) ....A comprehensive approach to development and understanding of III-nitride-based high performance electronic devices. This project forms part of a long-term, international research program into the development of high-power, high-frequency electronics for high performance radar and communications systems. The advanced fabrication technologies and designs being investigated in this project fall well within the designated priority goal of Frontier Technologies. III-nitride (GaN, AlN, InN and alloys) technology is also of high interest to defence organisations, as radar and satellite-communications links, which operate at frequencies ranging from hundreds of MHz to tens of GHz, often have high power-amplification requirements. The project therefore also falls within the priority goal of Transformational Defence Technologies.Read moreRead less