Linkage Infrastructure, Equipment And Facilities - Grant ID: LE150100172
Funder
Australian Research Council
Funding Amount
$270,000.00
Summary
Inductively-coupled plasma etching facility. Inductively-coupled plasma etching facility: The aim of this project is to bring together an inductively-coupled plasma etcher with a high resolution tool for optical lithography to create a facility capable of producing nano-structures in silicon surfaces. Such structures are the basis of high performance photonic, nano-electronic, and MicroElectroMechanical (MEM) devices. The lithography tool is a step-and-repeat system capable of exceptionally high ....Inductively-coupled plasma etching facility. Inductively-coupled plasma etching facility: The aim of this project is to bring together an inductively-coupled plasma etcher with a high resolution tool for optical lithography to create a facility capable of producing nano-structures in silicon surfaces. Such structures are the basis of high performance photonic, nano-electronic, and MicroElectroMechanical (MEM) devices. The lithography tool is a step-and-repeat system capable of exceptionally high rates of throughput so this etcher will be a crucial enabling tool for efficient fabrication of nano-devices for research into quantum computing, high bandwidth, quantum-secure optical communications, renewable energy, and for applications in medicine. The etcher will be available for national access.Read moreRead less
Linkage Infrastructure, Equipment And Facilities - Grant ID: LE140100170
Funder
Australian Research Council
Funding Amount
$560,000.00
Summary
Ultra low temperature scanning gate facility for study of advanced nanostructure devices and materials. Ultra low temperature scanning gate facility for study of advanced nanostructure devices and materials: Electronic devices and materials underpin a range of significant industries worldwide. However while there are numerous techniques for imaging the structure of a material, including X-rays, electron microscopy, atom probe tomography, and nuclear scattering, none allow us to see how the elect ....Ultra low temperature scanning gate facility for study of advanced nanostructure devices and materials. Ultra low temperature scanning gate facility for study of advanced nanostructure devices and materials: Electronic devices and materials underpin a range of significant industries worldwide. However while there are numerous techniques for imaging the structure of a material, including X-rays, electron microscopy, atom probe tomography, and nuclear scattering, none allow us to see how the electrons and holes move inside a material or device. This project will create a new scanning gate microscope facility for imaging electrical current flow in advanced quantum devices and the new generation of topological insulators and atomically thin crystals such as graphene. The project will stimulate new studies of the next generation of electronic materials and devices, providing the underpinning knowledge for the future development of post silicon electronics.Read moreRead less