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Research Topic : OPTICAL MAPPING
Field of Research : Materials Engineering
Australian State/Territory : WA
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  • Funded Activity

    Linkage Projects - Grant ID: LP170100088

    Funder
    Australian Research Council
    Funding Amount
    $490,000.00
    Summary
    Defect engineering in molecular beam epitaxy-grown mercury cadmium telluride. This project aims to develop high quality mercury cadmium telluride (HgCdTe) materials with lower defect density and lower background doping levels. This will enable future, high-performance, lower-cost infrared sensors with the unique features of higher yield, larger array size and higher operating temperature. The project will generate new science and technologies on defect engineering in the epitaxial growth of sem .... Defect engineering in molecular beam epitaxy-grown mercury cadmium telluride. This project aims to develop high quality mercury cadmium telluride (HgCdTe) materials with lower defect density and lower background doping levels. This will enable future, high-performance, lower-cost infrared sensors with the unique features of higher yield, larger array size and higher operating temperature. The project will generate new science and technologies on defect engineering in the epitaxial growth of semiconducting HgCdTe on cadmium zinc telluride (CdZnTe) substrates. This will contribute to the development of core Australian industry sectors such as defence, environmental monitoring, medical imaging, earth remote sensing, mining, and oil and gas.
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    Funded Activity

    Discovery Projects - Grant ID: DP110105082

    Funder
    Australian Research Council
    Funding Amount
    $390,000.00
    Summary
    Cadmium telluride/Germanium (CdTe/Ge) tandem-junction solar cells for efficiency enhancement in thin-film photovoltaics. The purpose of this project is to improve the efficiency of large-area, thin-film CdTe solar cells by using them in a tandem arrangement with thin-film Ge cells. An increase of 25 per cent in efficiency appears possible, which would greatly improve the prospects for cost-competitive photovoltaic power generation.
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    Funded Activity

    Discovery Projects - Grant ID: DP170104562

    Funder
    Australian Research Council
    Funding Amount
    $488,000.00
    Summary
    Bandgap engineered mercury cadmium telluride heterostructures on gallium antimonide alternative substrates. This project aims to develop bandgap engineered mercury cadmium telluride heterostructures on gallium antimonide alternative substrates to enable high performance lower-cost infrared sensors with high yield, large array size, multiband detection and higher operating temperature. High performance infrared sensors and systems are core enabling technologies in civilian and defence application .... Bandgap engineered mercury cadmium telluride heterostructures on gallium antimonide alternative substrates. This project aims to develop bandgap engineered mercury cadmium telluride heterostructures on gallium antimonide alternative substrates to enable high performance lower-cost infrared sensors with high yield, large array size, multiband detection and higher operating temperature. High performance infrared sensors and systems are core enabling technologies in civilian and defence applications such as remote sensing, environmental monitoring, night vision and national security. This project expects to research into defect generation mechanisms in epitaxial growth of semiconducting mercury cadmium telluride on lattice mismatched substrates. This is expected to contribute to Australian industry sectors, thereby benefiting the Australian economy, society, environment, and national security.
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    Funded Activity

    ARC Future Fellowships - Grant ID: FT130101708

    Funder
    Australian Research Council
    Funding Amount
    $753,128.00
    Summary
    HgCdSe: A novel II-VI semiconductor material for next generation infrared technologies. High performance infrared sensors and systems represent core technologies in various civilian and defence applications such as remote sensing, environment monitoring, night vision and national security. The goal of this project is to develop new mercury cadmium selenide-based materials on gallium antimonide substrates for future high performance infrared sensors with the unique features of low cost, large arr .... HgCdSe: A novel II-VI semiconductor material for next generation infrared technologies. High performance infrared sensors and systems represent core technologies in various civilian and defence applications such as remote sensing, environment monitoring, night vision and national security. The goal of this project is to develop new mercury cadmium selenide-based materials on gallium antimonide substrates for future high performance infrared sensors with the unique features of low cost, large array size, room temperature operation as well as multiband detection. The outcomes of this project will lead to new science and next generation infrared sensors of benefit to Australian industry and defence technology.
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    Funded Activity

    Discovery Projects - Grant ID: DP200103188

    Funder
    Australian Research Council
    Funding Amount
    $494,000.00
    Summary
    Defect generation in hetero-epitaxy on lattice mismatched substrates. High quality lattice mismatched semiconductor heterostructures are core enabling technologies for next generation electronic and optoelectronic devices with new functions and features such as monolithic integration, lower production costs, larger wafer size, and better system robustness. This project will generate new science on defect generation in lattice mismatched hetero-epitaxy with the aim of developing novel strategies .... Defect generation in hetero-epitaxy on lattice mismatched substrates. High quality lattice mismatched semiconductor heterostructures are core enabling technologies for next generation electronic and optoelectronic devices with new functions and features such as monolithic integration, lower production costs, larger wafer size, and better system robustness. This project will generate new science on defect generation in lattice mismatched hetero-epitaxy with the aim of developing novel strategies for their minimisation. The direct outcome will be higher quality HgCdTe materials on lattice mismatched Si or III-V substrates with defect density low enough for fabricating high performance mid-wave and long-wave infrared arrays with features of lower cost, larger array format size, and higher operating temperature.
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    Funded Activity

    Linkage Infrastructure, Equipment And Facilities - Grant ID: LE110100099

    Funder
    Australian Research Council
    Funding Amount
    $290,000.00
    Summary
    A complete near-field scanning optical microscope for advanced characterisation of novel and functional materials. This near-field optical scanning microscope will be unique in Australia and will substantially enhance national research capabilities in functional materials, nanotechnology, biotechnology and chemistry. It will create a platform to advance Australian research to new levels in pharmaceuticals, nanomaterials and energy storage materials.
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    Funded Activity

    Linkage Infrastructure, Equipment And Facilities - Grant ID: LE110100200

    Funder
    Australian Research Council
    Funding Amount
    $200,000.00
    Summary
    Advanced facility for magneto-transport characterisation of semiconductor nanostructures. This facility combines a 16 Tesla superconducting magnet with temperature variability from 1.5 degrees above absolute zero to 500 degrees with advanced mobility spectrum analysis algorithms. It will enable improved separation of previously indistinguishable multiple carrier effects in advanced semiconductor systems. This improved separation will allow an improved understanding of multiple carrier effects wh .... Advanced facility for magneto-transport characterisation of semiconductor nanostructures. This facility combines a 16 Tesla superconducting magnet with temperature variability from 1.5 degrees above absolute zero to 500 degrees with advanced mobility spectrum analysis algorithms. It will enable improved separation of previously indistinguishable multiple carrier effects in advanced semiconductor systems. This improved separation will allow an improved understanding of multiple carrier effects which will be essential before the development of frontier semiconductor technologies becomes possible.
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    Showing 1-7 of 7 Funded Activites

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