Linkage Infrastructure, Equipment And Facilities - Grant ID: LE120100026
Funder
Australian Research Council
Funding Amount
$480,000.00
Summary
A surface characterisation facility. This surface characterisation facility will provide scientists with an understanding of material's surfaces and interfaces. This will lead to a range of new technologies and innovative solutions required to address the many resource and environmental challenges facing our planet now and in the future.
Linkage Infrastructure, Equipment And Facilities - Grant ID: LE170100233
Funder
Australian Research Council
Funding Amount
$250,000.00
Summary
Characterisation of infrared imaging technologies. This project aims to establish a facility for two-dimensional (2D) infrared sensor array testing and prototyping. Systematic characterisation and prototyping of 2D imaging arrays is vital in showcasing and realising Australia's innovation and research investment in photodetector technologies. This facility will enable research on 2D imaging arrays, such as pixel yield and cross-talk, device reliability physics, failure mechanisms, noise and long ....Characterisation of infrared imaging technologies. This project aims to establish a facility for two-dimensional (2D) infrared sensor array testing and prototyping. Systematic characterisation and prototyping of 2D imaging arrays is vital in showcasing and realising Australia's innovation and research investment in photodetector technologies. This facility will enable research on 2D imaging arrays, such as pixel yield and cross-talk, device reliability physics, failure mechanisms, noise and long-term stability. The facility will demonstrate Australia's innovative imaging technologies, applicable in science, industry, defence and security, attracting interest from both Australian and international industries.Read moreRead less
Fundamental electronic transport in emerging one-dimensional nanoelectronic devices. This project aims to understand the mechanisms limiting electronic transport in one-dimensional nanoelectronic devices and structures at temperatures relevant for practical device operation. One-dimensional nanoelectronic devices will be the building blocks of future technological innovation. This project will use a characterisation approach, numerical modelling and simulation, which promise to deliver knowledge ....Fundamental electronic transport in emerging one-dimensional nanoelectronic devices. This project aims to understand the mechanisms limiting electronic transport in one-dimensional nanoelectronic devices and structures at temperatures relevant for practical device operation. One-dimensional nanoelectronic devices will be the building blocks of future technological innovation. This project will use a characterisation approach, numerical modelling and simulation, which promise to deliver knowledge and analysis tools for ongoing innovation and optimisation in semiconductor nanoelectronics.Read moreRead less
Dark current and noise mechanisms in nBn HgCdTe infrared detectors. Novel mercury cadmium telluride (HgCdTe) nBn (two n-type semiconductors sandwiching a barrier layer) infrared (IR) detectors are theoretically capable of operating at higher temperatures than conventional IR detectors. Their reduced cooling requirements lead to reductions in the size, weight and power of IR imaging systems without loss in IR detection performance. Unfortunately, HgCdTe nBn detectors are currently affected by non ....Dark current and noise mechanisms in nBn HgCdTe infrared detectors. Novel mercury cadmium telluride (HgCdTe) nBn (two n-type semiconductors sandwiching a barrier layer) infrared (IR) detectors are theoretically capable of operating at higher temperatures than conventional IR detectors. Their reduced cooling requirements lead to reductions in the size, weight and power of IR imaging systems without loss in IR detection performance. Unfortunately, HgCdTe nBn detectors are currently affected by non-ideal dark current and noise levels whose physical origins and nature are poorly understood. The proposed experimental and theoretical investigations and optimisations are anticipated to minimise such non-idealities and thus enable the demonstration of HgCdTe nBn IR detectors capable of revolutionising portable IR detection systems for security and rescue applications.Read moreRead less
Active channel organic transistors. The objective of our project is to create the next generation of electronic transistors based upon organic semiconductors. Specifically, the project will create devices for use in applications such as low power lighting, chemical sensing and lasers.
Discovery Early Career Researcher Award - Grant ID: DE160100569
Funder
Australian Research Council
Funding Amount
$375,000.00
Summary
Ultra-Porous Devices by Synergistic Aerosol and Atomic Layer Depositions. The project aspires to develop a scalable low-cost approach for the synthesis and integration of ultra-porous films in nanodevices. The project intends to deposit atomic layers onto aerogel-like nanoparticle networks, self-assembled by thermophoresis of flame-made aerosols. This would increase the atomically-deposited layer mass by several hundred-fold per cycle and result in ultra-porous films with electrochemically activ ....Ultra-Porous Devices by Synergistic Aerosol and Atomic Layer Depositions. The project aspires to develop a scalable low-cost approach for the synthesis and integration of ultra-porous films in nanodevices. The project intends to deposit atomic layers onto aerogel-like nanoparticle networks, self-assembled by thermophoresis of flame-made aerosols. This would increase the atomically-deposited layer mass by several hundred-fold per cycle and result in ultra-porous films with electrochemically active surface areas. It is intended that the project will demonstrate the fabrication of solid–gas, solid–liquid and solid–solid nanointerfaces, which will be applicable to key emerging technologies such as wearable medical diagnostics.Read moreRead less
High speed, high sensitivity thermal imaging. This project aims to increase sensitivity-speed product of thermal imagers by the novel using porous materials. Increased sensitivity-speed products will improve thermal imager effectiveness in motion capture and high resolution remote sensing applications. To develop these porous materials, this project will study the interdependence of optical, mechanical, thermal and electrical properties at the micro- and nano-scale. It will create a narrowband r ....High speed, high sensitivity thermal imaging. This project aims to increase sensitivity-speed product of thermal imagers by the novel using porous materials. Increased sensitivity-speed products will improve thermal imager effectiveness in motion capture and high resolution remote sensing applications. To develop these porous materials, this project will study the interdependence of optical, mechanical, thermal and electrical properties at the micro- and nano-scale. It will create a narrowband resonant cavity detector which increases sensitivity and provides spectral filtering for remote sensing and gas detection. This technology is built on a low-cost scalable all-silicon platform. This technology could benefit road safety, border security, defence, aerospace, remote sensing and industrial monitoring.Read moreRead less
Silicon-Carbide Switches for Post-Silicon Efficiency of Power Electronics. The aim of this project is to create a prototype of a silicon carbide (SiC)-based power-electronic switch for improved energy efficiency and reduced size of power-electronic circuits, well beyond the theoretical limits of silicon technology. Until very recently, the dominant controlled switch in electronics could only be implemented as a silicon transistor. A new method of electronic passivation of SiC surfaces has enable ....Silicon-Carbide Switches for Post-Silicon Efficiency of Power Electronics. The aim of this project is to create a prototype of a silicon carbide (SiC)-based power-electronic switch for improved energy efficiency and reduced size of power-electronic circuits, well beyond the theoretical limits of silicon technology. Until very recently, the dominant controlled switch in electronics could only be implemented as a silicon transistor. A new method of electronic passivation of SiC surfaces has enabled the recent commercialisation of SiC transistors. It is expected that the material advantages of SiC can be fully exploited by a new device structure and a new fabrication process.Read moreRead less
Fundamental processes in organic photodetectors - towards next generation imaging and sensing systems. Photodetectors are central components in displays, imaging devices and sensors. The project aims to develop the next generation of photodetectors based upon organic semiconductors with the potential to be extremely cheap, recyclable, mechanically flexible and even biocompatible.
Linkage Infrastructure, Equipment And Facilities - Grant ID: LE160100062
Funder
Australian Research Council
Funding Amount
$700,000.00
Summary
Silicon LPCVD Facility for Nanoelectronics, Quantum Computing & Solar Cells. Silicon low-pressure chemical vapor deposition facility:
This project aims to complete Australia’s first manufacturing line for nanoscale devices. It aims to establish a low-pressure chemical vapour deposition system to complete the existing silicon complementary metal-oxide semiconductor process line. It is currently impossible to fabricate many devices compatible with industrial manufacture, limiting device reliabili ....Silicon LPCVD Facility for Nanoelectronics, Quantum Computing & Solar Cells. Silicon low-pressure chemical vapor deposition facility:
This project aims to complete Australia’s first manufacturing line for nanoscale devices. It aims to establish a low-pressure chemical vapour deposition system to complete the existing silicon complementary metal-oxide semiconductor process line. It is currently impossible to fabricate many devices compatible with industrial manufacture, limiting device reliability and path to commercialisation. The tool is designed to incorporate four furnace tubes for growing thin layers of electronic materials, including polycrystalline-silicon, epitaxial silicon, and silicon-nitride. One unique aspect will be growth of isotopically-enriched silicon-28 that is essential for spin-based quantum computing. The tool would support a wide range of projects nationally in silicon micro/nano-systems, advanced photovoltaics, and quantum technologies.Read moreRead less