Synthesis of enriched silicon for long-lived donor quantum states. We have discovered a method to make silicon highly enriched in the desirable spin-zero isotope using readily available ion implantation tools. This “semiconductor vacuum” is essential for building future quantum computer devices using the quantum spin of millions of implanted atoms with revolutionary capabilities. We have demonstrated long-lived implanted donor atom quantum states in prototype material, made possible by the deple ....Synthesis of enriched silicon for long-lived donor quantum states. We have discovered a method to make silicon highly enriched in the desirable spin-zero isotope using readily available ion implantation tools. This “semiconductor vacuum” is essential for building future quantum computer devices using the quantum spin of millions of implanted atoms with revolutionary capabilities. We have demonstrated long-lived implanted donor atom quantum states in prototype material, made possible by the depletion of background spins in natural silicon and now aim to push the enrichment to greater extremes. We will integrate the extreme material into functional devices that use electrically detected electron spin resonance to probe exceptionally durable quantum states and open a near-term pathway to large-scale devices.Read moreRead less
Discovery Early Career Researcher Award - Grant ID: DE160101490
Funder
Australian Research Council
Funding Amount
$373,536.00
Summary
Probing topological edge channels at the atomic scale. This project is anticipated to provide a platform for nanoelectronic devices where quantum degrees of freedom remain robust up to very high temperatures. The one-dimensional edge channels of two-dimensional topological insulators are an emerging research area that challenges our understanding of quantum matter at the atomic scale. The project aims to deliver a new insight into the nature of edge channel transport and scattering by directly m ....Probing topological edge channels at the atomic scale. This project is anticipated to provide a platform for nanoelectronic devices where quantum degrees of freedom remain robust up to very high temperatures. The one-dimensional edge channels of two-dimensional topological insulators are an emerging research area that challenges our understanding of quantum matter at the atomic scale. The project aims to deliver a new insight into the nature of edge channel transport and scattering by directly measuring their wave functions and quasi-particle excitations with atomic scale resolution. By applying these methods to systems with very large topological gaps, the anticipated results will provide a foundation for robust high-temperature, industry-compatible spintronics. The intended outcomes may improve computational speed in new information technologies and reduce power consumption.Read moreRead less
Discovery Early Career Researcher Award - Grant ID: DE140100775
Funder
Australian Research Council
Funding Amount
$394,177.00
Summary
Punching holes in GaAs: a novel route to making artificial graphene and topological insulators. In the past seven years there has been an explosion of interest in materials such as graphene and topological insulators due to their unique electronic properties, culminating in the award of the 2010 Nobel Prize in Physics. However these materials face significant challenges that limit how we can manipulate them and use them in industry. This project will overcome these challenges by developing artif ....Punching holes in GaAs: a novel route to making artificial graphene and topological insulators. In the past seven years there has been an explosion of interest in materials such as graphene and topological insulators due to their unique electronic properties, culminating in the award of the 2010 Nobel Prize in Physics. However these materials face significant challenges that limit how we can manipulate them and use them in industry. This project will overcome these challenges by developing artificial graphene and topological insulators made using existing nanofabrication techniques on conventional semiconductors already used by industry. This will make it possible to study the unique electronic properties of these materials with unprecedented control, with the ultimate aim of using artificially designed electronic materials in industry.Read moreRead less
Back to the future: making atomic-scale high-speed germanium transistors. This project links scientists from Australia and Italy to develop atomic-scale devices in the germanium material. By exploiting the unique properties of this material and its integration with silicon, faster and smaller transistors will be developed.
Discovery Early Career Researcher Award - Grant ID: DE120100702
Funder
Australian Research Council
Funding Amount
$375,000.00
Summary
Single atom based quantum metrology. Taking advantage of the natural properties of a single atom embedded in an industrial nano-device, this project will improve the quantum standard for current and will lead to a more accurate determination of the fundamental constants of nature, thus providing broad benefits to Australian Science, Technology and Industry.
ARC Centre of Excellence in Future Low Energy Electronics Technologies. This Centre aims to develop the scientific foundation and intellectual property for new electronics technologies. Decreasing energy use is a major societal challenge, and this Centre aims to meet that challenge by realising fundamentally new types of electronic conduction without resistance in solid-state systems at room temperature. Novel resistance-free electronic phenomena at room temperature are expected to form the basi ....ARC Centre of Excellence in Future Low Energy Electronics Technologies. This Centre aims to develop the scientific foundation and intellectual property for new electronics technologies. Decreasing energy use is a major societal challenge, and this Centre aims to meet that challenge by realising fundamentally new types of electronic conduction without resistance in solid-state systems at room temperature. Novel resistance-free electronic phenomena at room temperature are expected to form the basis of integrated electronics technology with ultra-low energy consumption. This Centre’s development of innovative electronics could put Australia at the forefront of the international electronics industry.Read moreRead less
The Silicon Single Electron Pump: A New World Standard for Electric Current. This project seeks to develop a new ultra-high-precision current standard, providing a missing link in today’s world standards for electrical measurement. Although highly accurate metrological standards are available for both voltage and resistance, there is no equivalent current standard available. The project aims to create nanoelectronic charge-pump devices that can generate a highly accurate output current. This pro ....The Silicon Single Electron Pump: A New World Standard for Electric Current. This project seeks to develop a new ultra-high-precision current standard, providing a missing link in today’s world standards for electrical measurement. Although highly accurate metrological standards are available for both voltage and resistance, there is no equivalent current standard available. The project aims to create nanoelectronic charge-pump devices that can generate a highly accurate output current. This project plans to use silicon-based single-electron-transistor technology to undertake high-precision measurements. The project expects to contribute to the technological basis for a new world current standard.Read moreRead less
A Transportable Self-referenced Quantum Current Standard on a Silicon Chip. The field of metrological science strives for continuous improvement in precision and reproducibility, a goal only achievable by exploiting the fundamental constants of nature. In electrical metrology, both voltage (V) and resistance (R) standards have reached this milestone, but not current (I). We aim to develop novel self-referenced nanoelectronic charge-pump devices that can generate a highly accurate, error-detectab ....A Transportable Self-referenced Quantum Current Standard on a Silicon Chip. The field of metrological science strives for continuous improvement in precision and reproducibility, a goal only achievable by exploiting the fundamental constants of nature. In electrical metrology, both voltage (V) and resistance (R) standards have reached this milestone, but not current (I). We aim to develop novel self-referenced nanoelectronic charge-pump devices that can generate a highly accurate, error-detectable output current utilising Australian-developed silicon-based single-electron transistor technology. We will undertake high-precision measurements in collaboration with leading European standards institutes and researchers, establishing the technological basis for a new world current standard that is reproducible worldwide.Read moreRead less
Single electron pumping for current measurement standards. Precision measurement standards for electric current and voltage are necessary to ensure the safe and accurate operation of much of the electronic equipment that underpins modern society. This project will develop a new ultra-high-precision current standard, providing a missing link in today's world standards for electrical measurement.
Rational Design of Novel Multiferroic Materials for Energy Harvesting and Energy Efficiency. Multiferroics are a class of fundamentally complex materials in which several ferroic orders (for example, ferroelectric and ferromagnetic) coexist. The coupling between their electric and magnetic degrees of freedom is controllable via stress and external fields, thus opening the possibility for breakthrough technological developments. By working at the frontier of complex nanostructured oxide materials ....Rational Design of Novel Multiferroic Materials for Energy Harvesting and Energy Efficiency. Multiferroics are a class of fundamentally complex materials in which several ferroic orders (for example, ferroelectric and ferromagnetic) coexist. The coupling between their electric and magnetic degrees of freedom is controllable via stress and external fields, thus opening the possibility for breakthrough technological developments. By working at the frontier of complex nanostructured oxide materials, this project aims to establish the rational basis for systematic design of novel artificially layered multiferroics, develop accurate and computationally affordable methods to simulate these materials under finite-temperature conditions, and exploit this knowledge to devise likely revolutionary photovoltaic, nanoelectronic and energy conversion applications.Read moreRead less