Linkage Infrastructure, Equipment And Facilities - Grant ID: LE160100062
Funder
Australian Research Council
Funding Amount
$700,000.00
Summary
Silicon LPCVD Facility for Nanoelectronics, Quantum Computing & Solar Cells. Silicon low-pressure chemical vapor deposition facility:
This project aims to complete Australia’s first manufacturing line for nanoscale devices. It aims to establish a low-pressure chemical vapour deposition system to complete the existing silicon complementary metal-oxide semiconductor process line. It is currently impossible to fabricate many devices compatible with industrial manufacture, limiting device reliabili ....Silicon LPCVD Facility for Nanoelectronics, Quantum Computing & Solar Cells. Silicon low-pressure chemical vapor deposition facility:
This project aims to complete Australia’s first manufacturing line for nanoscale devices. It aims to establish a low-pressure chemical vapour deposition system to complete the existing silicon complementary metal-oxide semiconductor process line. It is currently impossible to fabricate many devices compatible with industrial manufacture, limiting device reliability and path to commercialisation. The tool is designed to incorporate four furnace tubes for growing thin layers of electronic materials, including polycrystalline-silicon, epitaxial silicon, and silicon-nitride. One unique aspect will be growth of isotopically-enriched silicon-28 that is essential for spin-based quantum computing. The tool would support a wide range of projects nationally in silicon micro/nano-systems, advanced photovoltaics, and quantum technologies.Read moreRead less
Linkage Infrastructure, Equipment And Facilities - Grant ID: LE110100159
Funder
Australian Research Council
Funding Amount
$360,000.00
Summary
National facility for biased target deposition of alloyed nanolayers. This facility will enhance Australia's strengths and capabilities in fabricating structures, with applications in multiple research fields including opto-magneto-electronics, next generation lithium ion batteries and energy nanogenerators. It will enhance Australia's research profile as a leader in nanotechnology.
Fundamental electronic transport in emerging one-dimensional nanoelectronic devices. This project aims to understand the mechanisms limiting electronic transport in one-dimensional nanoelectronic devices and structures at temperatures relevant for practical device operation. One-dimensional nanoelectronic devices will be the building blocks of future technological innovation. This project will use a characterisation approach, numerical modelling and simulation, which promise to deliver knowledge ....Fundamental electronic transport in emerging one-dimensional nanoelectronic devices. This project aims to understand the mechanisms limiting electronic transport in one-dimensional nanoelectronic devices and structures at temperatures relevant for practical device operation. One-dimensional nanoelectronic devices will be the building blocks of future technological innovation. This project will use a characterisation approach, numerical modelling and simulation, which promise to deliver knowledge and analysis tools for ongoing innovation and optimisation in semiconductor nanoelectronics.Read moreRead less
Dark current and noise mechanisms in nBn HgCdTe infrared detectors. Novel mercury cadmium telluride (HgCdTe) nBn (two n-type semiconductors sandwiching a barrier layer) infrared (IR) detectors are theoretically capable of operating at higher temperatures than conventional IR detectors. Their reduced cooling requirements lead to reductions in the size, weight and power of IR imaging systems without loss in IR detection performance. Unfortunately, HgCdTe nBn detectors are currently affected by non ....Dark current and noise mechanisms in nBn HgCdTe infrared detectors. Novel mercury cadmium telluride (HgCdTe) nBn (two n-type semiconductors sandwiching a barrier layer) infrared (IR) detectors are theoretically capable of operating at higher temperatures than conventional IR detectors. Their reduced cooling requirements lead to reductions in the size, weight and power of IR imaging systems without loss in IR detection performance. Unfortunately, HgCdTe nBn detectors are currently affected by non-ideal dark current and noise levels whose physical origins and nature are poorly understood. The proposed experimental and theoretical investigations and optimisations are anticipated to minimise such non-idealities and thus enable the demonstration of HgCdTe nBn IR detectors capable of revolutionising portable IR detection systems for security and rescue applications.Read moreRead less
Band engineered heterostructures for next generation mercury cadmium telluride infrared photodetectors. The application of unique heterostructures in mercury cadmium telluride (HgCdTe) photodetectors is proposed to address at least four problems: increase of operating temperature, passivation, multiband operation, fill factor. This ambitious project will lead to a significant step forward the HgCdTe infrared photodetector physics and technology.
High speed, high sensitivity thermal imaging. This project aims to increase sensitivity-speed product of thermal imagers by the novel using porous materials. Increased sensitivity-speed products will improve thermal imager effectiveness in motion capture and high resolution remote sensing applications. To develop these porous materials, this project will study the interdependence of optical, mechanical, thermal and electrical properties at the micro- and nano-scale. It will create a narrowband r ....High speed, high sensitivity thermal imaging. This project aims to increase sensitivity-speed product of thermal imagers by the novel using porous materials. Increased sensitivity-speed products will improve thermal imager effectiveness in motion capture and high resolution remote sensing applications. To develop these porous materials, this project will study the interdependence of optical, mechanical, thermal and electrical properties at the micro- and nano-scale. It will create a narrowband resonant cavity detector which increases sensitivity and provides spectral filtering for remote sensing and gas detection. This technology is built on a low-cost scalable all-silicon platform. This technology could benefit road safety, border security, defence, aerospace, remote sensing and industrial monitoring.Read moreRead less
Integrated Cooling Enhancement Technology for Power Electronics. This project aims to develop an unprecedented integrated cooling enhancement technology (IceTech) for silicon carbide on silicon power electronics. IceTech represents a radical departure from current failure-prone packaging solutions. The project aims to elucidate the fundamental interactions between magnetism, heat and mass transfer and apply them to cooling. In partnership with SPTS Technologies, the project then aims to develop ....Integrated Cooling Enhancement Technology for Power Electronics. This project aims to develop an unprecedented integrated cooling enhancement technology (IceTech) for silicon carbide on silicon power electronics. IceTech represents a radical departure from current failure-prone packaging solutions. The project aims to elucidate the fundamental interactions between magnetism, heat and mass transfer and apply them to cooling. In partnership with SPTS Technologies, the project then aims to develop fabrication processes for integrating microchannels and highly sensitive integrated silicon carbide temperature sensors into a chip. This novel fabrication technology allows for the implementation of the revolutionary enhanced cooling concept using two-phase flow with magnetic liquid plugs.Read moreRead less
Towards energy-efficient lighting based on light-emitting diodes: the role of silicon carbide grown on Si Wafers. This project will investigate a potential solution to the problems of cost and quality of light-emitting diodes for solid-state lighting. The expected outcome is knowledge to underpin future development of solid-state lighting that is suitable for a wide replacement of the much less efficient and effective incandescent bulbs and fluorescent tubes.
Linkage Infrastructure, Equipment And Facilities - Grant ID: LE100100134
Funder
Australian Research Council
Funding Amount
$500,000.00
Summary
Integrated photodetector array fabrication facility. Sensing is becoming a ubiquitous requirement for nearly all physical, chemical and biological research fields, and is increasingly important for Australia's national security and industry competitiveness. This proposal is aimed at building Australia's strengths in optoelectronic sensing technologies, enhancing and enabling research and technologies for innovative environmental monitoring, medical diagnostics, new technologies for mineral expl ....Integrated photodetector array fabrication facility. Sensing is becoming a ubiquitous requirement for nearly all physical, chemical and biological research fields, and is increasingly important for Australia's national security and industry competitiveness. This proposal is aimed at building Australia's strengths in optoelectronic sensing technologies, enhancing and enabling research and technologies for innovative environmental monitoring, medical diagnostics, new technologies for mineral exploration and improved evaluation of remediation of mine sites, through to the surveillance and sensing needs of customs, defence and national security. In doing so, it will enhance Australia's research profile as one of the world's leaders in the development and use of optoelectronic sensing.Read moreRead less
Silicon-Carbide Switches for Post-Silicon Efficiency of Power Electronics. The aim of this project is to create a prototype of a silicon carbide (SiC)-based power-electronic switch for improved energy efficiency and reduced size of power-electronic circuits, well beyond the theoretical limits of silicon technology. Until very recently, the dominant controlled switch in electronics could only be implemented as a silicon transistor. A new method of electronic passivation of SiC surfaces has enable ....Silicon-Carbide Switches for Post-Silicon Efficiency of Power Electronics. The aim of this project is to create a prototype of a silicon carbide (SiC)-based power-electronic switch for improved energy efficiency and reduced size of power-electronic circuits, well beyond the theoretical limits of silicon technology. Until very recently, the dominant controlled switch in electronics could only be implemented as a silicon transistor. A new method of electronic passivation of SiC surfaces has enabled the recent commercialisation of SiC transistors. It is expected that the material advantages of SiC can be fully exploited by a new device structure and a new fabrication process.Read moreRead less