Graphene based nanostructures for high performance devices. Graphene sheets are the building blocks of graphite and a huge variety of carbon based nanostructures. Stacked graphene sheets have the unique property of the highest known thermal conductivity. By manipulating graphene sheets into three-dimensional channels and interconnects, vastly increased heat fluxes can be extracted from sensitive nanoscale devices such as microprocessors and micro electro mechanical systems. The potential of stac ....Graphene based nanostructures for high performance devices. Graphene sheets are the building blocks of graphite and a huge variety of carbon based nanostructures. Stacked graphene sheets have the unique property of the highest known thermal conductivity. By manipulating graphene sheets into three-dimensional channels and interconnects, vastly increased heat fluxes can be extracted from sensitive nanoscale devices such as microprocessors and micro electro mechanical systems. The potential of stacks of graphene as electrical contacts and interconnects will also be explored. By combining thermal and electrical functions, graphene will allow more efficient use of the valuable space on future devices. The outcome will be more efficient nanoscale devices to meet ever increasing performance demands.Read moreRead less
Dopants, defects and related issues in Zinc Oxide. ZnO is a promising semiconductor for optoelectronic devices namely green, blue, ultraviolet (UV) and white light emitting diodes (LEDs) and ultimately UV lasers. It can also act as a transparent conductive oxide which has applications in flat panel displays and photovoltaic devices. Because of these potential applications, ZnO is the 'hottest' semiconductor with abounding literature and four new international conferences organised on progress in ....Dopants, defects and related issues in Zinc Oxide. ZnO is a promising semiconductor for optoelectronic devices namely green, blue, ultraviolet (UV) and white light emitting diodes (LEDs) and ultimately UV lasers. It can also act as a transparent conductive oxide which has applications in flat panel displays and photovoltaic devices. Because of these potential applications, ZnO is the 'hottest' semiconductor with abounding literature and four new international conferences organised on progress in this research area in recent years. This project is an excellent opportunity for Australia to increase its strength in optoelectronic device research and to provide an understanding of some fundamental issues in doping, defect formation, diffusion and annihilation in ZnO.Read moreRead less
Nanocavities in Si - Structural Evolution and Metal Gettering. Nanocavities represent a novel means of minimising metallic contamination in the active region of Si microelectronic devices. We propose innovative experiments, using in-situ transmission electron microscopy and synchrotron-based x-ray methods, to achieve a fundamental understanding of the processes that govern nanocavity structural evolution and metallic impurity trapping. We seek to develop a patentable technology to enhance impu ....Nanocavities in Si - Structural Evolution and Metal Gettering. Nanocavities represent a novel means of minimising metallic contamination in the active region of Si microelectronic devices. We propose innovative experiments, using in-situ transmission electron microscopy and synchrotron-based x-ray methods, to achieve a fundamental understanding of the processes that govern nanocavity structural evolution and metallic impurity trapping. We seek to develop a patentable technology to enhance impurity trapping efficiency and thus dramatically increase the applicability of this industrially-relevant process.Read moreRead less
Probing the properties of amorphous semiconductors with swift heavy ion irradiation and synchrotron radiation. This proposal is consistent with Research Priority 3: Frontier Technologies for Building and Transforming Australian Industries and the Priority Goals: Breakthrough Science, Frontier Technologies and Advanced Materials. We seek to deduce and understand the processes operative during swift heavy ion irradiation of amorphous semiconductors to probe fundamental materials properties. Ou ....Probing the properties of amorphous semiconductors with swift heavy ion irradiation and synchrotron radiation. This proposal is consistent with Research Priority 3: Frontier Technologies for Building and Transforming Australian Industries and the Priority Goals: Breakthrough Science, Frontier Technologies and Advanced Materials. We seek to deduce and understand the processes operative during swift heavy ion irradiation of amorphous semiconductors to probe fundamental materials properties. Our results and accompanying scientific insight will broaden the applicability of amorphous semiconductors in advanced technologies, enhance the national research profile, increase the domestic knowledge base and yield skilled, young scientists trained to utilise the Australian Synchrotron.Read moreRead less
Amorphous-Phase Formation and Structure in Semiconductor Substrates following Swift Heavy-Ion Irradiation. This proposal is consistent with Research Priority 3: Frontier Technologies for Building and Transforming Australian Industries and the Priority Goals: Breakthrough Science, Frontier Technologies and Advanced Materials. We seek to deduce and understand the processes operative during swift heavy-ion irradiation of elemental and binary semiconductor substrates and identify and measure the ....Amorphous-Phase Formation and Structure in Semiconductor Substrates following Swift Heavy-Ion Irradiation. This proposal is consistent with Research Priority 3: Frontier Technologies for Building and Transforming Australian Industries and the Priority Goals: Breakthrough Science, Frontier Technologies and Advanced Materials. We seek to deduce and understand the processes operative during swift heavy-ion irradiation of elemental and binary semiconductor substrates and identify and measure the resulting amorphous-phase structure. Our results and accompanying scientific insight will broaden the applicability of these materials in advanced technologies, enhance the national research profile, increase the domestic knowledge base and yield skilled, young scientists trained to utilize the Australian Synchrotron when commissioned in 2007.Read moreRead less
Amorphisation of Semiconductor and Elemental Metallic Nanocrystals by Ion Irradiation. This proposal is consistent with Research Priority 3: Frontier Technologies for Building and Transforming Australian Industries and Priority Goals: Breakthrough Science, Advanced Materials and Frontier Technologies. We seek to understand and develop a unique methodology for modifying and tailoring the structure of semiconductor and metallic nanocrystals in ways not achievable within the bulk phase. Our res ....Amorphisation of Semiconductor and Elemental Metallic Nanocrystals by Ion Irradiation. This proposal is consistent with Research Priority 3: Frontier Technologies for Building and Transforming Australian Industries and Priority Goals: Breakthrough Science, Advanced Materials and Frontier Technologies. We seek to understand and develop a unique methodology for modifying and tailoring the structure of semiconductor and metallic nanocrystals in ways not achievable within the bulk phase. Our results and accompanying scientific insight will broaden the applicability of these materials in advanced technologies, enhance the national research profile, increase the domestic knowledge base and yield skilled, young scientists trained to utilize the Australian Synchrotron when commissioned in 2007.Read moreRead less
Atomic-Scale Identification of Amorphization and Relaxation Processes in Compound Semiconductors. We seek a fundamental understanding of the processes that govern implantation-induced structure, at the nanometer scale, in the compound semiconductors used in photonic device fabrication. Since implantation-induced disorder limits the performance of such devices, the proposed project is of substantial technological significance and national benefit. The Photon Science techniques of perturbed angu ....Atomic-Scale Identification of Amorphization and Relaxation Processes in Compound Semiconductors. We seek a fundamental understanding of the processes that govern implantation-induced structure, at the nanometer scale, in the compound semiconductors used in photonic device fabrication. Since implantation-induced disorder limits the performance of such devices, the proposed project is of substantial technological significance and national benefit. The Photon Science techniques of perturbed angular correlation and extended x-ray absorption fine structure spectroscopy will be used to identify the mechanism of amorphisation and relaxation in order to enable more effective exploitation of compound semiconductors in advanced telecommunications systems.Read moreRead less
Template-Directed Growth and Assembly of Nanoscale Graphitic Carbon Structures. The various nanometre-scale forms of graphitic carbon have been strong candidates for use as novel building blocks in electronic, opto-electronic and electro-mechanical devices. However, their development has been hampered by a lack of control of the type, quality and homogeneity of structures produced by conventional methods.
This project aims to fabricate and characterise thin films of ordered, high-quality carbon ....Template-Directed Growth and Assembly of Nanoscale Graphitic Carbon Structures. The various nanometre-scale forms of graphitic carbon have been strong candidates for use as novel building blocks in electronic, opto-electronic and electro-mechanical devices. However, their development has been hampered by a lack of control of the type, quality and homogeneity of structures produced by conventional methods.
This project aims to fabricate and characterise thin films of ordered, high-quality carbon nanostructures. A novel synthesis route, involving the controlled deposition of carbon onto template substrates, is proposed. The products will be studied with near-atomic resolution to understand their formation mechanisms, and hence approach the goal of elaborating carbon-based nanodevices.
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Ion implantation induced diffusion and defect evolution in Si nanostructures. A fundamental understanding of nanostructures is essential for the development of nanoscale electronic devices. This project will investigate ion implantation of dopant atoms into Si nanostructures. The goal is to develop a broad understanding of the effect of the nanostructure dimensions on point-defect-induced diffusion and the formation of extended defects. In particular, the influence of multiple surfaces on point- ....Ion implantation induced diffusion and defect evolution in Si nanostructures. A fundamental understanding of nanostructures is essential for the development of nanoscale electronic devices. This project will investigate ion implantation of dopant atoms into Si nanostructures. The goal is to develop a broad understanding of the effect of the nanostructure dimensions on point-defect-induced diffusion and the formation of extended defects. In particular, the influence of multiple surfaces on point-defect recombination will be investigated. Concurrently, the techniques necessary for the analysis of nano-structures will be developed.
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Ion implantation processing in Silicon Carbide for microelectronic applications. The aim of this project is to study the application of ion implantation to silicon carbide for dopant incorporation and defect engineering. The successful dopant incorporation, especially p-type doping will be crucial for SiC high power and high frequency devices. The outcomes of the project are (a) the understanding of extended and point defect formation in silicon carbide from ion implantation. (b) detailed charac ....Ion implantation processing in Silicon Carbide for microelectronic applications. The aim of this project is to study the application of ion implantation to silicon carbide for dopant incorporation and defect engineering. The successful dopant incorporation, especially p-type doping will be crucial for SiC high power and high frequency devices. The outcomes of the project are (a) the understanding of extended and point defect formation in silicon carbide from ion implantation. (b) detailed characterisation of the extended defects formed by ion implantation (c) establishment of dose regimes for point defects and extended defect formation and (d) development of procedures for the incorporation of dopants with minimum residual defect formation.Read moreRead less