Silicon-Carbide Switches for Post-Silicon Efficiency of Power Electronics. The aim of this project is to create a prototype of a silicon carbide (SiC)-based power-electronic switch for improved energy efficiency and reduced size of power-electronic circuits, well beyond the theoretical limits of silicon technology. Until very recently, the dominant controlled switch in electronics could only be implemented as a silicon transistor. A new method of electronic passivation of SiC surfaces has enable ....Silicon-Carbide Switches for Post-Silicon Efficiency of Power Electronics. The aim of this project is to create a prototype of a silicon carbide (SiC)-based power-electronic switch for improved energy efficiency and reduced size of power-electronic circuits, well beyond the theoretical limits of silicon technology. Until very recently, the dominant controlled switch in electronics could only be implemented as a silicon transistor. A new method of electronic passivation of SiC surfaces has enabled the recent commercialisation of SiC transistors. It is expected that the material advantages of SiC can be fully exploited by a new device structure and a new fabrication process.Read moreRead less
Next generation high sensitivity polymeric Extreme Ultraviolet (EUV) resists. Each generation of computer we purchase has faster processors, larger memory and is smaller and cheaper than the preceding model. However the annual improvements are at risk due to inherent problems with existing technologies, so in this project we will produce technologies that will enable the next generation of energy-efficient, faster computers.